? semiconductor components industries, llc, 2005 february, 2005 ? rev. 6 1 publication order number: MJL3281A/d MJL3281A (npn) mjl1302a (pnp) preferred devices complementary npn-pnp silicon power bipolar transistors the MJL3281A and mjl1302a are powerbase power transistors for high power audio, disk head positioners and other linear applications. ? designed for 100 w audio frequency ? gain complementary: gain linearity from 100 ma to 7 a high gain ? 60 to 175 h fe = 45 (min) @ i c = 8 a ? low harmonic distortion ? high safe operation area ? 1 a/100 v @ 1 second ? high f t ? 30 mhz typical ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 230 vdc collector?base voltage v cbo 230 vdc emitter?base voltage v ebo 7 vdc collector?emitter voltage ? 1.5 v v cex 230 vdc collector current ? continuous ? peak (note 1) i c 15 25 adc base current ? continuous i b 1.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 watts w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r q jc 0.625 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width = 5 ms, duty cycle < 10%. mjlxxxxa ayyww device package shipping 2 ordering information MJL3281A to?264 to?264 case 340g style 2 30 units/rail 2 1 15 amperes complementary silicon power transistors 230 volts 200 watts 3 marking diagram xxxx = 3281 or 1302 a = location code yy = year ww = work week preferred devices are recommended choices for future use and best overall value. mjl1302a to?264 30 units/rail 1 base 2 collector 3 emitter 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com
MJL3281A (npn) mjl1302a (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 230 ? ? vdc emitter?base voltage (i e = 100 adc, i c = 0) v ebo 7 ? ? vdc collector cutoff current (v cb = 230 vdc, i e = 0) i cbo ? ? 50 m adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo ? ? 5 m adc emitter cutoff current (v eb = 7 vdc, i c = 0) i ebo ? ? 25 m adc second breakdown second breakdown collector with base forward biased (v ce = 50 vdc, t = 1 s (non?repetitive) (v ce = 100 vdc, t = 1 s (non?repetitive) i s/b 4 1 ? ? ? ? adc on characteristics dc current gain (i c = 100 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 7 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) (i c = 15 adc, v ce = 5 vdc) h fe 60 60 60 60 60 45 12 125 ? ? ? 115 ? 35 175 175 175 175 175 ? ? collector?emitter saturation voltage (i c = 10 adc, i b = 1 adc) v ce(sat) ? ? 3 vdc dynamic characteristics current?gain ? bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t ? 30 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob ? ? 600 pf
MJL3281A (npn) mjl1302a (pnp) http://onsemi.com 3 i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp mjl1302a f, current bandwidth product (mhz) t npn MJL3281A i c , collector current (amps) 0.1 1.0 10 50 40 30 20 10 0 60 40 30 0 10 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 20 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 50 figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) pnp mjl1302a npn MJL3281A h fe , dc current gain pnp mjl1302a npn MJL3281A 1000 100 10 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 100 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v typical characteristics
MJL3281A (npn) mjl1302a (pnp) http://onsemi.com 4 v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) typical characteristics pnp mjl1302a npn MJL3281A 45 25 20 15 10 5.0 0 5.0 010152025 45 25 20 15 10 0 5.0 010152025 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 30 40 35 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 40 35 30 figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical base?emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 12. typical base?emitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) pnp mjl1302a npn MJL3281A pnp mjl1302a npn MJL3281A 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0 100 10 1.0 0.1 0.5 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed)
MJL3281A (npn) mjl1302a (pnp) http://onsemi.com 5 figure 13. active region safe operating area v ce , collector-emitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 150 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. typical characteristics 100 10 1.0 0.1 100 10 1.0 1000 10 ms 50 ms 250 ms 1 sec figure 14. mjl1302a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 15. MJL3281A typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob pnp mjl1302a npn MJL3281A
MJL3281A (npn) mjl1302a (pnp) http://onsemi.com 6 package dimensions style 2: pin 1. base 2. collector 3. emitter to?3pbl (to?264) case 340g?02 issue j dim a min max min max inches 28.0 29.0 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.2 ref 0.411 ref n 4.35 ref 0.172 ref p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.25 ref 0.089 ref u 6.3 ref 0.248 ref w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m tb s 123 ?b? ?t? q on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MJL3281A/d powerbase is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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